发明申请
- 专利标题: REVERSE-CONDUCTING IGBT DEVICE AND MANUFACTURING METHOD THEREOF, INVERTER STAGE
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申请号: US17947703申请日: 2022-09-19
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公开(公告)号: US20230103191A1公开(公告)日: 2023-03-30
- 发明人: Ignazio BERTUGLIA , Ettore CHIACCHIO
- 申请人: STMICROELECTRONICS S.r.l.
- 申请人地址: IT Agrate Brianza
- 专利权人: STMICROELECTRONICS S.r.l.
- 当前专利权人: STMICROELECTRONICS S.r.l.
- 当前专利权人地址: IT Agrate Brianza
- 优先权: IT102021000024974 20210929
- 主分类号: H01L29/872
- IPC分类号: H01L29/872 ; H01L29/739 ; H01L29/06 ; H02M7/537 ; H01L21/265
摘要:
A RC-IGBT with fast recovery integrated diode is proposed adopting the concept of a hybrid structure with conventional IGBT emitter trench-stop, separated from an embedded low efficiency injection anode diode. The body region of the IGBT and the anode region of the diode are separately patterned and doped, and the metal barrier layer is removed from the diode area allowing a direct ohmic contact of AlSi alloy on the underneath P-doped anode. A full-anode contact opening is present in the diode area. Moreover, corresponding dummy trenches in the diode area are short-circuited to the emitter electrode giving the benefit to reduce the transfer Miller capacitance. In this way, a good trade-off of VF vs Err can be obtained for the integrated diode without downgrading the IGBT performances both in terms of VCEsat and leakage, differently from the case of devices manufactured by lifetime control techniques.