发明申请
- 专利标题: AIRGAP SPACER OF FINFET DEVICE WITH BACKSIDE BPR AND POWER DISTRIBUTION NETWORK
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申请号: US17485580申请日: 2021-09-27
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公开(公告)号: US20230110073A1公开(公告)日: 2023-04-13
- 发明人: Ruilong Xie , Julien Frougier , Kangguo Cheng , Chanro Park
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L27/088 ; H01L29/06 ; H01L23/522 ; H01L23/528 ; H01L29/66 ; H01L21/8234
摘要:
A semiconductor structure includes a substrate and a field effect transistor disposed on the substrate. The field effect transistor includes a vertical fin, source and drain regions separated by a gate region, a gate structure disposed over the gate region and a gate airgap spacer at least partially disposed about the gate structure.