Invention Application
- Patent Title: HALOGENATION-BASED GAPFILL METHOD AND SYSTEM
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Application No.: US17953502Application Date: 2022-09-27
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Publication No.: US20230115806A1Publication Date: 2023-04-13
- Inventor: Timothee Blanquart , René Henricus Jozef Vervuurt , Jihee Jeon
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02

Abstract:
A method and system for forming material within a gap on a surface of a substrate are disclosed. An exemplary method includes forming a material layer on a surface of the substrate within a first reaction chamber, exposing the material layer to a halogen reactant in a second reaction chamber to thereby form a flowable layer comprising a halogen within the gap, and optionally exposing the flowable layer to a converting reactant in a third reaction chamber to form a converted material within the gap. Exemplary methods can further include a step of heat treating the flowable layer or the converted material. Exemplary systems can perform the method.
Information query
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