- 专利标题: THRESHOLD VOLTAGE DETECTING METHOD
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申请号: US17614505申请日: 2021-10-28
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公开(公告)号: US20230120112A1公开(公告)日: 2023-04-20
- 发明人: Wei Dou , Jing Xu
- 申请人: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- 申请人地址: CN Shenzhen, Guangdong
- 专利权人: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- 当前专利权人: SHENZHEN CHINA STAR OPTOELECTRONICS SEMICONDUCTOR DISPLAY TECHNOLOGY CO., LTD.
- 当前专利权人地址: CN Shenzhen, Guangdong
- 优先权: CN202111198336.X 20211014
- 国际申请: PCT/CN2021/126871 WO 20211028
- 主分类号: G09G3/00
- IPC分类号: G09G3/00 ; G09G3/3233
摘要:
A threshold voltage detecting method is disclosed in the present application. In the threshold voltage detecting method provided in the present application, a path between a driving transistor and a detecting circuit is shut down during detecting, so that a current flowing through the driving transistor in a detecting stage only needs to charge a storage capacitor, but does not need to charge a parasitic capacitor on the detecting circuit, thereby shortening a threshold voltage detecting time of the driving transistor, and further improving threshold voltage detecting efficiency of the driving transistor.