Invention Application
- Patent Title: SEMICONDUCTOR DEVICES
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Application No.: US18088550Application Date: 2022-12-24
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Publication No.: US20230129233A1Publication Date: 2023-04-27
- Inventor: Seungchan Yun , Donghwan Han
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2019-0152986 20191126
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78

Abstract:
A semiconductor device including: a first structure including: a first semiconductor pattern protruding from a substrate, the first semiconductor pattern being a channel; a first conductive pattern surrounding the first semiconductor pattern, the first conductive pattern being a gate electrode; a first impurity region under the first semiconductor pattern, the first impurity region contacting the first semiconductor pattern, the first impurity region being a source or drain region; and a second impurity region contacting the first semiconductor pattern, the second impurity region being the other of the source or drain region; and a second structure including: second semiconductor patterns spaced apart from each other, each of the second semiconductor patterns protruding from the substrate; second conductive patterns surrounding the second semiconductor patterns, respectively; and first contact plugs connected to the second conductive patterns, wherein the first structure is a vfet, and the second structure includes a resistor or a capacitor.
Public/Granted literature
- US12224336B2 Semiconductor devices Public/Granted day:2025-02-11
Information query
IPC分类: