Invention Application
- Patent Title: Modified NiTa2O6-based Microwave Dielectric Ceramic Material Co-sintered at Low Temperature and Its Preparation Method
-
Application No.: US17979922Application Date: 2022-11-03
-
Publication No.: US20230132916A1Publication Date: 2023-05-04
- Inventor: MengJiang Xing , XiaoZhen Li , HongYu Yang , MingShan Qu
- Applicant: Yangtze Delta Region Institute of University of Electronic Science and Technology of China, Huzhou
- Applicant Address: CN Huzhou
- Assignee: Yangtze Delta Region Institute of University of Electronic Science and Technology of China, Huzhou
- Current Assignee: Yangtze Delta Region Institute of University of Electronic Science and Technology of China, Huzhou
- Current Assignee Address: CN Huzhou
- Priority: CN2021112920315 20211103
- Main IPC: C04B35/495
- IPC: C04B35/495 ; C04B35/64 ; C04B35/626
Abstract:
The invention belongs to the field of electronic ceramics and its manufacturing, in particular to the modified NiTa2O6-based microwave dielectric ceramic material co-sintered at low temperature and its preparation method. Based on the low melting point characteristics of CuO and B2O3, and the radius of Cu2+ ions is similar to that of Ni2+ and Ta5+ ions, the chemical general formula of the invention is designed as xCuO-(1-x)NiO-[7.42y+(xy/14.33)]B2O3—Ta2O5, and the molar content of each component is adjusted from raw materials. The main crystalline phase of NiTa2O6 is synthesized at a lower pre-sintering temperature, and NiTa2O6-based ceramic material with low-temperature sintering characteristics and excellent microwave dielectric properties are directly synthesized at one time, which broadened the application range in LTCC field.
Public/Granted literature
- US11746056B2 Modified NiTa Public/Granted day:2023-09-05
Information query
IPC分类:
