Memory circuitry comprising strings of memory cells comprising laterally-spaced memory blocks individually comprise a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers in a memory-array region. The insulative tiers and the conductive tiers of the laterally-spaced memory blocks extend from the memory-array region into a stair-step region. Individual stairs in the stair-step region comprise one of the conductive tiers and a riser. Conductive vias are individually directly against conductive material that is in the one conductive tier in one of the individual stairs. Individual of the conductive vias where directly against the conductive material are horizontally-longitudinally-elongated at an angle of 0° to 60° horizontally from the riser of the one individual stair. Other embodiments, including method, are disclosed.