A semiconductor device includes a semiconductor structure, a conductive nitride feature, a third dielectric feature, and a conductive line feature. The semiconductor structure includes a substrate, two source/drain regions disposed in the substrate, a first dielectric feature disposed over the substrate, a gate structure disposed in the first dielectric feature and between the source/drain regions, a second dielectric feature disposed over the first dielectric feature, and a contact feature disposed in the second dielectric feature and being connected to at least one of the source/drain regions and the gate structure. The conductive nitride feature includes metal nitride or alloy nitride, is disposed in the second dielectric feature, and is connected to the contact feature. The third dielectric feature is disposed over the second dielectric feature. The conductive feature is disposed in the third dielectric feature and is connected to the conductive nitride feature opposite to the contact feature.