Invention Publication
- Patent Title: Thermal Structure for Semiconductor Device and Method of Forming the Same
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Application No.: US17861556Application Date: 2022-07-11
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Publication No.: US20240014091A1Publication Date: 2024-01-11
- Inventor: Wei-Ming Wang , Yu-Hung Lin , Shih-Peng Tai , Kuo-Chung Yee
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L23/367
- IPC: H01L23/367 ; H01L23/00 ; H01L23/48 ; H01L25/065

Abstract:
A semiconductor device includes an integrated circuit structure and a thermal pillar over the integrated circuit structure. The integrated circuit structure includes a semiconductor substrate including circuitry, a dielectric layer over the semiconductor substrate, an interconnect structure over the dielectric layer, and a first thermal fin extending through the semiconductor substrate, the dielectric layer, and the interconnect structure. The first thermal fin is electrically isolated from the circuitry. The thermal pillar is thermally coupled to the first thermal fin.
Public/Granted literature
- US12272613B2 Thermal structure for semiconductor device and method of forming the same Public/Granted day:2025-04-08
Information query
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