SINGLE PHOTON AVALANCHE DIODE

Invention Publication

US20240014342A1 SINGLE PHOTON AVALANCHE DIODE 审中-公开

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Patent Title: SINGLE PHOTON AVALANCHE DIODE
Application No.: US18220082

Application Date: 2023-07-10
Publication No.: US20240014342A1

Publication Date: 2024-01-11
Inventor: Sara PELLEGRINI , Dominique GOLANSKI , Alexandre LOPEZ
Applicant: STMicroelectronics (Research & Development) Limited , STMicroelectronics (Crolles 2) SAS
Applicant Address: GB Marlow
Assignee: STMicroelectronics (Research & Development) Limited,STMicroelectronics (Crolles 2) SAS
Current Assignee: STMicroelectronics (Research & Development) Limited,STMicroelectronics (Crolles 2) SAS
Current Assignee Address: GB Marlow; FR Crolles
Priority: EP 306043.5 2022.07.11
Main IPC: H01L31/107
IPC: H01L31/107 ; H01L31/02 ; H01L21/762 ; H01L31/0352

Abstract:

A device includes a single photon avalanche diode in a substrate and a resistor. The resistor is provided resting on an insulating trench located in a doped anode region of the single photon avalanche diode.

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L31/00	对红外辐射、光、较短波长的电磁辐射，或微粒辐射敏感的，并且专门适用于把这样的辐射能转换为电能的，或者专门适用于通过这样的辐射进行电能控制的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；其零部件（H01L51/42优先；由形成在一共用衬底内或其上的多个固态组件，而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00）
H01L31/08	.其中的辐射控制通过该器件的电流的，例如光敏电阻器
H01L31/10	..特点在于至少有一个电位跃变势垒或表面势垒的，例如光敏晶体管
H01L31/101	...对红外、可见或紫外辐射敏感的器件
H01L31/102	....仅以一个势垒或面垒为特征的
H01L31/107	.....以雪崩模式工作的势垒，如雪崩光二极管