Invention Publication
- Patent Title: PLASMA-RESISTANT MEMBER HAVING STACKED STRUCTURE AND METHOD FOR FABRICATING THE SAME
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Application No.: US18134296Application Date: 2023-04-13
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Publication No.: US20240026521A1Publication Date: 2024-01-25
- Inventor: Inhwan LEE , Kangbin BAE
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.,Korea University Research and Business Foundation
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.,Korea University Research and Business Foundation
- Current Assignee Address: KR Suwon-si; KR Seoul
- Priority: KR 2022089978 2022.07.21
- Main IPC: C23C14/08
- IPC: C23C14/08 ; C23C14/30 ; C23C14/02

Abstract:
A plasma-resistant member includes a lower layer disposed on a substrate and including yttrium oxide, a buffer layer disposed on the lower layer, and an upper layer disposed on the buffer layer and including yttrium oxyfluoride or fluorine-rich yttrium oxide, wherein the buffer layer has a thermal expansion coefficient between a thermal expansion coefficient of the upper layer and a thermal expansion coefficient of the lower layer.
Information query
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