- 专利标题： ELECTRIC CIRCUIT ASSEMBLY COMPRISING A FERROELECTRIC FIELD EFFECT TRANSISTOR, AND MEMORY CELL
-
申请号： US18267797申请日： 2021-12-14
-
公开(公告)号： US20240055036A1公开(公告)日： 2024-02-15
- 发明人: Thomas Kampfe , Nelli Laleni
- 申请人： Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V.
- 申请人地址： DE Munich
- 专利权人： Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V.
- 当前专利权人： Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V.
- 当前专利权人地址： DE Munich
- 优先权： DE 2020216060.0 2020.12.16
- 国际申请： PCT/EP2021/085658 2021.12.14
- 进入国家日期： 2023-06-16
- 主分类号： G11C11/22
- IPC分类号： G11C11/22 ; G11C15/04
摘要：
An electric circuit assembly comprising a ferroelectric field effect transistor, an electric energy source, and a resistive element having a minimum electric resistance of 100 kOhm. The resistive element is electrically connected to a drain terminal of the ferroelectric field effect transistor, and the electric energy source is electrically connected to a gate terminal and a source terminal of the ferroelectric field effect transistor.
信息查询
