Invention Publication
- Patent Title: DATA-DRIVEN PREDICTION AND IDENTIFICATION OF FAILURE MODES BASED ON WAFER-LEVEL ANALYSIS AND ROOT CAUSE ANALYSIS FOR SEMICONDUCTOR PROCESSING
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Application No.: US18268924Application Date: 2021-12-09
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Publication No.: US20240062356A1Publication Date: 2024-02-22
- Inventor: Huina XU , Yana MATSUSHITA , Tanbir HASAN , Ren-Jay KOU , Namita Adrianus GOEL , Hongmei LI , Maxim PISARENCO , Marleen KOOIMAN , Chrysostomos BATISTAKIS , Johannes ONVLEE
- Applicant: ASML Netherlands B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- International Application: PCT/EP2021/084913 2021.12.09
- Date entered country: 2023-06-21
- Main IPC: G06T7/00
- IPC: G06T7/00

Abstract:
A method and apparatus for analyzing an input electron microscope image of a first area on a first wafer are disclosed. The method comprises obtaining a plurality of mode images from the input electron microscope image corresponding to a plurality of interpretable modes. The method further comprises evaluating the plurality of mode images, and determining, based on evaluation results, contributions from the plurality of interpretable modes to the input electron microscope image. The method also comprises predicting one or more characteristics in the first area on the first wafer based on the determined contributions. In some embodiments, a method and apparatus for performing an automatic root cause analysis based on an input electron microscope image of a wafer are also disclosed.
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