Invention Publication
- Patent Title: NANOFABRICATION METHOD WITH CORRECTION OF DISTORTION WITHIN AN IMPRINT SYSTEM
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Application No.: US17823411Application Date: 2022-08-30
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Publication No.: US20240066786A1Publication Date: 2024-02-29
- Inventor: Se-Hyuk Im , Anshuman Cherala
- Applicant: CANON KABUSHIKI KAISHA
- Applicant Address: JP Tokyo
- Assignee: CANON KABUSHIKI KAISHA
- Current Assignee: CANON KABUSHIKI KAISHA
- Current Assignee Address: JP Tokyo
- Main IPC: B29C59/00
- IPC: B29C59/00 ; B29C59/02 ; B82Y40/00

Abstract:
A nanofabrication method comprises receiving information regarding in-plane distortion of a substrate, modeling target out-of-plane displacement as a summation of a plurality of geometric modes represented by a linear combination of basis functions, generating a first drop pattern of formable material based on the modeled out-of-plane displacement, generating a second drop pattern by merging the first drop pattern with a drop pattern based on a topography of the template and the substrate; dispensing drops of formable material onto the substrate according to the second drop pattern, and contacting the dispensed drops with the template to form a film. The plurality of geometric modes are modified using a plurality of unique predetermined correction coefficients. Each unique predetermined correction coefficient represents a relationship between an analytically determined amount of in-plane distortion and an empirically determined amount of in-plane distortion.
Public/Granted literature
- US12153342B2 Nanofabrication method with correction of distortion within an imprint system Public/Granted day:2024-11-26
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