- 专利标题: THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE, AND DISPLAY PANEL AND DEVICE
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申请号: US18261348申请日: 2021-10-22
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公开(公告)号: US20240079501A1公开(公告)日: 2024-03-07
- 发明人: Qi LIU , Jiantao LIU , Jianbo XIAN , Wei ZHANG , Jincheng GAO , Liangliang JIANG
- 申请人: HEFEI BOE DISPLAY TECHNOLOGY CO., LTD. , BOE TECHNOLOGY GROUP CO., LTD.
- 申请人地址: CN HEFEI, ANHUI
- 专利权人: HEFEI BOE DISPLAY TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人: HEFEI BOE DISPLAY TECHNOLOGY CO., LTD.,BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人地址: CN HEFEI, ANHUI; CN BEIJING
- 优先权: CN 2110551192.5 2021.05.20
- 国际申请: PCT/CN2021/125628 2021.10.22
- 进入国家日期: 2023-07-13
- 主分类号: H01L29/786
- IPC分类号: H01L29/786 ; H01L29/423 ; H01L29/66
摘要:
A thin film transistor and a manufacturing method therefor, an array substrate, and a display panel and device. The thin film transistor includes: a gate (11) and an active layer (12) that are located on one side of a base substrate (10); a gate insulation layer (13) located between the gate (11) and the active layer (12); and a source (14) and a drain (15) that are spaced apart and both are in contact with the active layer (12), wherein a first ratio of the thickness of the gate insulation layer (13) and the thickness of the active layer (12) ranges from 3 to 4.
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