Invention Publication
- Patent Title: CORRECTION OF LIGHT-SHIFT EFFECTS IN TRAPPED-ION QUANTUM GATES
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Application No.: US18540391Application Date: 2023-12-14
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Publication No.: US20240110876A1Publication Date: 2024-04-04
- Inventor: Shantanu DEBNATH , Vandiver CHAPLIN
- Applicant: IonQ, Inc.
- Applicant Address: US MD College Park
- Assignee: IonQ, Inc.
- Current Assignee: IonQ, Inc.
- Current Assignee Address: US MD College Park
- Main IPC: G01N21/65
- IPC: G01N21/65 ; G06N10/40

Abstract:
Aspects of the present disclosure relate generally to systems and methods for use in the implementation and/or operation of quantum information processing (QIP) systems, and more particularly, to the correction of light-shift effects in trapped-ion quantum gates. Techniques are described for light-shift correction of single qubit gates when the gates are implemented using counter-propagating Raman laser beams and when the gates are implemented using co-propagating Raman laser beams. Moreover, techniques are also described for light-shift correction of two-qubit gates.
Public/Granted literature
- US12130234B2 Correction of light-shift effects in trapped-ion quantum gates Public/Granted day:2024-10-29
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