Invention Publication
- Patent Title: SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
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Application No.: US18374205Application Date: 2023-09-28
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Publication No.: US20240113157A1Publication Date: 2024-04-04
- Inventor: Jisong JIN
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Priority: CN 2211211339.7 2022.09.30
- Main IPC: H01L21/283
- IPC: H01L21/283 ; H01L21/3213

Abstract:
A semiconductor structure includes a substrate that includes a first region, a second region, and a third region; a first electrode layer disposed over the first region and the second region; a first dielectric layer disposed over the substrate; a second electrode layer disposed on the first dielectric layer over the third region and the second region; a second dielectric layer disposed over the substrate; a third electrode layer disposed on the second dielectric layer over the second region and over a portion of each of the third and first regions; and a first plug disposed over the first region and a second plug disposed over the third region. The first plug is electrically connected with one of the first, second and third electrode layers, and the second plug is electrically connected with the other two electrode layers.
Information query
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