• Patent Title: GATE DRIVER FOR A LOW DROPOUT VOLTAGE REGULATOR
  • Application No.: US18467030
    Application Date: 2023-09-14
  • Publication No.: US20240113612A1
    Publication Date: 2024-04-04
  • Inventor: Jean-Robert Tourret
  • Applicant: NXP B.V.
  • Applicant Address: NL Eindhoven
  • Assignee: NXP B.V.
  • Current Assignee: NXP B.V.
  • Current Assignee Address: NL Eindhoven
  • Priority: EP 306461.9 2022.09.30
  • Main IPC: H02M1/00
  • IPC: H02M1/00 H02M1/08 H02M3/07
GATE DRIVER FOR A LOW DROPOUT VOLTAGE REGULATOR
Abstract:
A low drop-out (LDO) regulator, includes an NMOS transistor having one of a source and drain terminal configured to be coupled to a voltage supply and the other of the source and drain terminal coupled to the low drop out voltage regulator output. A gate driver for the LDO regulator includes a boost converter having a boost converter input configured to be coupled to a boost converter reference voltage, a boost converter output configured to output a boosted voltage greater than the boost converter reference voltage and the voltage supply; and a boost converter clock input configured to receive a clock signal. The gate driver further includes a notch filter having a notch filter input coupled to the boost converter output and a notch filter output coupled to the gate driver output.
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