Invention Publication
- Patent Title: DELAY CONTROL CIRCUIT AND METHOD, AND SEMICONDUCTOR MEMORY
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Application No.: US18446508Application Date: 2023-08-09
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Publication No.: US20240127881A1Publication Date: 2024-04-18
- Inventor: Zequn HUANG , Kai Sun
- Applicant: Changxin Memory Technologies, Inc.
- Applicant Address: CN Hefei City
- Assignee: Changxin Memory Technologies, Inc.
- Current Assignee: Changxin Memory Technologies, Inc.
- Current Assignee Address: CN Hefei City
- Priority: CN 2211223514.4 2022.10.08
- Main IPC: G11C11/4076
- IPC: G11C11/4076 ; G06F1/08 ; G06F11/10 ; H03K5/133

Abstract:
Provided in the embodiments of the present disclosure are a delay control circuit and method, and a semiconductor memory. The delay control circuit includes a clock circuit and a delay circuit. The clock circuit is configured to receive a temperature adjustment signal, and generate a first clock signal according to the temperature adjustment signal; and a clock cycle of the first clock signal is a preset value. The delay circuit is configured to receive the first clock signal and an initial command signal, and perform delay processing on the initial command signal according to the first clock signal, so as to obtain a target command signal; and a time interval between the target command signal and the initial command signal meets a preset timing condition.
Information query
IPC分类: