Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US18376022Application Date: 2023-10-03
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Publication No.: US20240130116A1Publication Date: 2024-04-18
- Inventor: Junhyeok AHN , Sohyun PARK
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20220130711 2022.10.12
- Main IPC: H10B12/00
- IPC: H10B12/00

Abstract:
A semiconductor device includes a substrate having an active region; a bit line structure on the substrate and extending in one direction; a bit line contact electrically connecting a first impurity region of the active region and the bit line structure; and a storage node contact disposed on a sidewall of the bit line structure and electrically connected to a second impurity region of the active region, wherein the storage node contact includes a vertical extension portion extending in a vertical direction, perpendicular to an upper surface of the substrate, and a horizontal extension portion integrally connected to the vertical extension portion and extending in a horizontal direction, parallel to the upper surface of the substrate.
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