Invention Publication
- Patent Title: DUAL CURRENT MAGNETIC FIELD SENSOR
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Application No.: US18047759Application Date: 2022-10-18
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Publication No.: US20240133981A1Publication Date: 2024-04-25
- Inventor: Stephan LEISENHEIMER , Richard HEINZ
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Main IPC: G01R33/07
- IPC: G01R33/07 ; G01R19/00 ; G01R33/00 ; H01L23/495

Abstract:
A current sensor arrangement includes a first conductor structure extending in a first direction and configured to carry a first current along the first direction; a second conductor structure extending in a second direction perpendicular to the first direction and configured to carry a second current along the second direction; and a magnetic field sensor arranged between the first conductor structure and the second conductor structure and configured to receive a first magnetic field produced by the first current and a second magnetic field produced by the second current. The first conductor structure and the second conductor structure overlap with the magnetic field sensor in a third direction that is perpendicular to the first and second directions. The magnetic field sensor includes a first sensor element sensitive to the first magnetic field and a second sensor element sensitive to the second magnetic field.
Public/Granted literature
- US20240230796A9 DUAL CURRENT MAGNETIC FIELD SENSOR Public/Granted day:2024-07-11
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