The present invention relates to a semiconductor optoelectronic device (10) comprising a junction (12) consisting a stack of layers defining an N-doped region, an intermediate region and a P-doped region, at least one layer, called a modulated layer, of the N-doped region and/or of the P-doped region and/or of the intermediate region, being formed of a plurality of stacks of sub-layers, each sub-layer differing from the other sub-layers of the same stack by a feature of the material of the sub-layer, called a distinctive feature, the thicknesses and distinctive features of the sub-layers being chosen so as to reduce the absorption of photons in the corresponding region compared with a semiconductor optoelectronic device, known as a reference device, the only difference being that each modulated layer is replaced by an unmodulated layer of the same thickness as the modulated layer and with identical features except for the distinctive feature.