- 专利标题: BIAS CIRCUIT AND POWER AMPLIFIER
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申请号: US18109876申请日: 2023-02-15
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公开(公告)号: US20240136985A1公开(公告)日: 2024-04-25
- 发明人: Qiang GU
- 申请人: Shanghai WUQI Microelectronics Co., Ltd.
- 申请人地址: CN Shanghai
- 专利权人: Shanghai WUQI Microelectronics Co., Ltd.
- 当前专利权人: Shanghai WUQI Microelectronics Co., Ltd.
- 当前专利权人地址: CN Shanghai
- 优先权: CN 22113128826 2022.10.24
- 主分类号: H03F3/213
- IPC分类号: H03F3/213 ; H03F3/45
摘要:
Bias circuits for CMOS power amplifiers are provided. The bias circuit includes a feedback module, a first bias module, and a second bias module. The feedback module has a first input connected to a output common mode voltage, a second input connected to a reference voltage, and an output connected to gates of main amplification transistors in a first differential amplification module; based on a difference between the output common mode voltage and the reference voltage, the feedback module adjusts gate voltages of main amplification transistors until the output common mode voltage is equal to the reference voltage; the first bias module provides bias voltages for the first differential amplification module; the second bias module provides bias voltages for a second differential amplification module. The present disclosure adopts direct negative feedback and cascoded current mirrors, which realize accurate DC gate bias and accurate control of the output common mode voltage.
公开/授权文献
- US20240235498A9 BIAS CIRCUIT AND POWER AMPLIFIER 公开/授权日:2024-07-11
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