Invention Publication
- Patent Title: MEMORY SUB-SYSTEM FOR MEMORY CELL IN-FIELD TOUCH-UP
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Application No.: US17982750Application Date: 2022-11-08
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Publication No.: US20240152279A1Publication Date: 2024-05-09
- Inventor: Huai-Yuan Tseng , Pitamber Shukla , Akira Goda
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
An apparatus can include a touch-up component. The touch-up component can detect a first charge parameter for a portion of memory of a memory system. The touch-up component can, subsequent to detecting the first charge parameter a particular time interval, detect a second charge parameter for the portion of memory. The touch-up component can determine a charge parameter change per time interval based on the first charge parameter, the second charge parameter, and the particular time interval. The touch-up component can perform a touch-up operation on the portion of memory at a particular time point based on the charge parameter change per time interval.
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