Implementations described herein relate to various structures, integrated assemblies, and memory devices. In some implementations, an integrated assembly includes a conductive plate, a top electrode in contact with the conductive plate and shared by a plurality of bottom electrodes included in the integrated assembly, a bottom electrode having a top surface, a bottom surface, and an exterior circumferential surface, and a ferroelectric insulator that separates the top electrode from the bottom electrode. In some implementations, a support structure is not present between a top surface of the ferroelectric insulator and a bottom surface of the conductive plate. The integrated assembly may include a leaker device having a top surface, a bottom surface in contact with the top surface of the bottom electrode, and an exterior circumferential surface. The leaker device may be configured to discharge charge from the bottom electrode to the conductive plate.