Invention Publication
- Patent Title: MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
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Application No.: US18489999Application Date: 2023-10-19
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Publication No.: US20240162092A1Publication Date: 2024-05-16
- Inventor: Yuji NAGUMO , Masashi UECHA , Masaru OKUDA , Masatake NAGAYA , Mitsuru KITAICHI , Akira MORI , Naoya KIYAMA , Masakazu TAKEDA
- Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , MITSUBOSHI DIAMOND INDUSTRIAL CO., LTD.
- Applicant Address: JP Kariya-city
- Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA,MIRISE Technologies Corporation,MITSUBOSHI DIAMOND INDUSTRIAL CO., LTD.
- Current Assignee: DENSO CORPORATION,TOYOTA JIDOSHA KABUSHIKI KAISHA,MIRISE Technologies Corporation,MITSUBOSHI DIAMOND INDUSTRIAL CO., LTD.
- Current Assignee Address: JP Kariya-city
- Priority: JP 22182569 2022.11.15
- Main IPC: H01L21/784
- IPC: H01L21/784 ; H01L21/3205
Abstract:
A manufacturing method of a semiconductor device includes: forming a plurality of element structures in a form of matrix on a first surface of a semiconductor wafer; forming a crack extending in a thickness direction of the semiconductor wafer along a boundary between the element structures adjacent to each other by pressing a pressing member against a second surface of the semiconductor wafer opposite to the first surface along the boundary; and dividing the semiconductor wafer along the boundary by pressing a dividing member against the semiconductor wafer on a first surface side along the boundary.
Information query
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