Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE HAVING THROUGH-VIA STRUCTURE
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Application No.: US18382546Application Date: 2023-10-23
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Publication No.: US20240178131A1Publication Date: 2024-05-30
- Inventor: Sunoo KIM , Shaofeng Ding , Jeonghoon Ahn , Jaehee Oh
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR SUWON-SI
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR SUWON-SI
- Priority: KR 20220163253 2022.11.29
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/768 ; H01L23/00 ; H01L23/48 ; H01L23/528

Abstract:
A semiconductor device includes: a semiconductor substrate; an integrated circuit layer disposed on the semiconductor substrate; a first metal wiring layer to an n-th metal wiring layer sequentially disposed on the semiconductor substrate and the integrated circuit layer, wherein n is a positive integer; a plurality of wiring vias connecting the first to n-th metal wiring layers to each other, and a through-via extending in a vertical direction from a via connection pad, which is any one of the first metal wiring layer to the n-th metal wiring layer, toward the semiconductor substrate and penetrating the semiconductor substrate, wherein the via connection pad is a capping-type via connection pad formed on an upper surface of the through-via.
Information query
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