Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE INCLUDING COMMON BODY BIAS REGION
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Application No.: US18226037Application Date: 2023-07-25
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Publication No.: US20240178213A1Publication Date: 2024-05-30
- Inventor: Changyeon Yu , Pansuk Kwak
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD
- Current Assignee Address: KR Suwon-si
- Priority: KR 20220161917 2022.11.28
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L21/02 ; H01L21/302 ; H01L21/768 ; H01L27/092 ; H01L29/06

Abstract:
A semiconductor device includes a substrate, a P-well region, a first N-type metal oxide semiconductor (NMOS) transistor provided in the P-well region, a second NMOS transistor provided on the substrate, and a common body bias region provided between the first NMOS transistor and the second NMOS transistor and contacting both the P-well region and the substrate.
Public/Granted literature
- US2188104A Condensation products of the anthraquinone series Public/Granted day:1940-01-23
Information query
IPC分类: