SEMICONDUCTOR DEVICE INCLUDING COMMON BODY BIAS REGION
Abstract:
A semiconductor device includes a substrate, a P-well region, a first N-type metal oxide semiconductor (NMOS) transistor provided in the P-well region, a second NMOS transistor provided on the substrate, and a common body bias region provided between the first NMOS transistor and the second NMOS transistor and contacting both the P-well region and the substrate.
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