Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US18433753Application Date: 2024-02-06
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Publication No.: US20240178225A1Publication Date: 2024-05-30
- Inventor: Ho-Jun KIM , Hyungjin PARK
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20210085032 2021.06.29
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8234

Abstract:
A semiconductor device including a substrate; gate structures spaced apart from each other on the substrate, each gate structure including a gate electrode and a gate capping pattern; source/drain patterns on opposite sides of the gate structures; first isolation patterns that respectively penetrate adjacent gate structures; and a second isolation pattern that extends between adjacent source/drain patterns, and penetrates at least one gate structure, wherein each first isolation pattern separates the gate structures such that the gate structures are spaced apart from each other, the first isolation patterns are aligned with each other, and top surfaces of the first and second isolation patterns are each located at a level the same as or higher than a level of a top surface of the gate capping pattern.
Public/Granted literature
- US12183737B2 Semiconductor device Public/Granted day:2024-12-31
Information query
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