- 专利标题： Current-Perpendicular-to-Plane Giant Magneto-Resistive Element and Manufacturing Method Thereof
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申请号： US18284964申请日： 2022-03-01
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公开(公告)号： US20240186047A1公开(公告)日： 2024-06-06
- 发明人: Yuichi FUJITA , Yuya SAKURABA , Yoshio MIURA , Taisuke SASAKI , Kazuhiro HONO
- 申请人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- 申请人地址： JP Tsukuba-shi, Ibaraki
- 专利权人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- 当前专利权人： NATIONAL INSTITUTE FOR MATERIALS SCIENCE
- 当前专利权人地址： JP Tsukuba-shi, Ibaraki
- 优先权： JP 21061205 2021.03.31
- 国际申请： PCT/JP2022/008645 2022.03.01
- 进入国家日期： 2023-09-29
- 主分类号： H01F10/32
- IPC分类号： H01F10/32 ; G11B5/39
摘要：
The present invention provides a current-perpendicular-to-plane giant magneto-resistive element that can use a high spin polarization (β) and spin asymmetry (γ) at the interface between layers, and that has a multilayered structure for easy film thickness design.
Used is a current-perpendicular-to-plane giant magneto-resistive element comprising: a substrate (11) made of an MgO substrate; and a giant magneto-resistive effect layer (17) that has at least one multilayer having first non-magnetic layers (13a), (13b), a lower ferromagnetic layer (14a), a lower Heusler alloy layer (14b), a second non-magnetic layer (15), an upper Heusler alloy layer (16b), and an upper ferromagnetic layer (16a) formed on the substrate (11).
Used is a current-perpendicular-to-plane giant magneto-resistive element comprising: a substrate (11) made of an MgO substrate; and a giant magneto-resistive effect layer (17) that has at least one multilayer having first non-magnetic layers (13a), (13b), a lower ferromagnetic layer (14a), a lower Heusler alloy layer (14b), a second non-magnetic layer (15), an upper Heusler alloy layer (16b), and an upper ferromagnetic layer (16a) formed on the substrate (11).
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