Invention Publication
- Patent Title: HETERO-JUNCTION BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
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Application No.: US18554309Application Date: 2021-05-12
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Publication No.: US20240194561A1Publication Date: 2024-06-13
- Inventor: Yuta Shiratori
- Applicant: Nippon Telegraph and Telephone Corporation
- Applicant Address: JP Tokyo
- Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee: Nippon Telegraph and Telephone Corporation
- Current Assignee Address: JP Tokyo
- International Application: PCT/JP2021/018000 2021.05.12
- Date entered country: 2023-10-06
- Main IPC: H01L23/373
- IPC: H01L23/373 ; H01L21/48 ; H01L21/78 ; H01L29/205 ; H01L29/66 ; H01L29/737
Abstract:
A hetero-junction bipolar transistor includes a heat dissipation structure made of metal, having one end in contact with top of a heat dissipation substrate around an element part and formed to penetrate a protective layer, and includes a collector wiring formed on the protective layer in contact with top of the heat dissipation structure and a collector electrode, a base contact electrode connected to the base electrode and penetrating the protective layer, and a base wiring connected to the base contact electrode and formed on the protective layer.
Information query
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