Invention Publication
- Patent Title: CONTACT LAYER FORMATION WITH MICROWAVE ANNEALING FOR NMOS DEVICES
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Application No.: US18387732Application Date: 2023-11-07
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Publication No.: US20240203742A1Publication Date: 2024-06-20
- Inventor: Nicolas Louis BREIL , Wolfgang R. ADERHOLD , Shashank SHARMA , Nilay Anil PRADHAN
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01J37/32 ; H01L21/02
Abstract:
A method of forming an electrical contact in semiconductor structure includes performing a selective deposition process on a semiconductor structure having a semiconductor region and a dielectric layer having a trench therewithin, the selective deposition process comprising epitaxially forming a contact layer on the semiconductor region within the trench of the dielectric layer, and performing a microwave anneal process to activate dopants in the epitaxially formed contact layer.
Information query
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