Invention Publication
- Patent Title: METAL-INSULATOR-METAL CAPACITOR
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Application No.: US18603529Application Date: 2024-03-13
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Publication No.: US20240222421A1Publication Date: 2024-07-04
- Inventor: Jihyung KIM , Jeonghoon Ahn , Jaehee Oh , Shaofeng Ding , Wonji Park , Jegwan Hwang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20210066797 2021.05.25
- The original application number of the division: US17559176 2021.12.22
- Main IPC: H01G4/30
- IPC: H01G4/30 ; H01L23/522

Abstract:
A metal-insulator-metal capacitor includes a first electrode disposed in a first region of an upper surface of a substrate, a second electrode covering the first electrode and extending to a second region surrounding an outer periphery of the first region, a third electrode covering the second electrode and extending to a third region surrounding an outer periphery of the second region, a first dielectric layer disposed between the first electrode and the second electrode to cover an upper surface and a side surface of the first electrode and extending to the second region, and a second dielectric layer disposed between the second electrode and the third electrode to cover an upper surface and a side surface of the second electrode and extending to the third region and in contact with the first dielectric layer.
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