发明公开
- 专利标题： THIN-FILM TRANSISTOR HAVING A VERTICAL STRUCTURE AND AN ELECTRONIC DEVICE
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申请号： US17925085申请日： 2022-11-04
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公开(公告)号： US20240234576A1公开(公告)日： 2024-07-11
- 发明人: Zhifu LI , Guanghui LIU , Fei AI , Dewei SONG , Chengzhi LUO
- 申请人： WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 申请人地址： CN Wuhan
- 专利权人： WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人： WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- 当前专利权人地址： CN Wuhan
- 优先权： CN 2210980039.9 2022.08.16
- 国际申请： PCT/CN2022/129808 2022.11.04
- 进入国家日期： 2022-11-14
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L27/12 ; H01L29/66
摘要：
The present application provides a thin-film transistor having a vertical structure and an electronic device. In the thin-film transistor having the vertical structure, the thin-film transistor includes a first doped portion and a second portion, the second doped portion is connected to and partly in contact with a channel portion through a via hole by arranging the second doped portion in the via hole of an insulating layer, which can reduce a contact area between the second doped portion and the channel portion, thereby reducing ions diffusing into a channel region and improving device stability of the thin-film transistor. Also, in the thin-film transistor having the vertical structure, a projection area of the thin-film transistor can be reduced, improving an aperture ratio of a display panel.
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