Invention Publication
- Patent Title: SELF-ALIGNED BARRIER FOR METAL VIAS
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Application No.: US18618815Application Date: 2024-03-27
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Publication No.: US20240243009A1Publication Date: 2024-07-18
- Inventor: Sung-Li WANG , Shuen-Shin LIANG , Yu-Yun PENG , Fang-Wei LEE , Chia-Hung CHU , Mrunal Abhijith KHADERBAD , Keng-Chu LIN
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/02 ; H01L21/285 ; H01L21/306 ; H01L21/8234 ; H01L23/522 ; H01L23/532
Abstract:
A device includes source/drain regions, a gate structure, a source/drain contact, and a tungsten structure. The source/drain regions are over a substrate. The gate structure is between the source/drain regions. The source/drain contact is over one of the source/drain regions. The tungsten structure is over the source/drain contact. The tungsten structure includes a lower portion and an upper portion above the lower portion. The upper portion has opposite sidewalls respectively set back from opposite sidewalls of the lower portion of the tungsten structure.
Information query
IPC分类:
