Invention Publication
- Patent Title: HIGH THERMAL CONDUCTIVITY BORON ARSENIDE FOR THERMAL MANAGEMENT, ELECTRONICS, OPTOELECTRONICS, AND PHOTONICS APPLICATIONS
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Application No.: US18623839Application Date: 2024-04-01
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Publication No.: US20240243034A1Publication Date: 2024-07-18
- Inventor: Yongjie HU , Joon Sang KANG
- Applicant: The Regents of the University of California
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Main IPC: H01L23/373
- IPC: H01L23/373 ; C30B25/02 ; C30B29/40 ; H01L21/02 ; H01L29/20
Abstract:
A device includes: (1) a boron arsenide substrate; and (2) an integrated circuit disposed in or over the boron arsenide substrate.
Information query
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