Invention Publication
- Patent Title: HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
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Application No.: US18381945Application Date: 2023-10-19
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Publication No.: US20240258398A1Publication Date: 2024-08-01
- Inventor: Junhyuk PARK , Jaejoon OH , Injun HWANG , Boram KIM , Jongseob KIM , Joonyong KIM
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20230011859 2023.01.30
- Main IPC: H01L29/47
- IPC: H01L29/47 ; H01L29/20 ; H01L29/40 ; H01L29/66 ; H01L29/778
Abstract:
A high electron mobility transistor (HEMT) includes a substrate, a channel layer on the substrate, a barrier layer on the channel layer, a p-type gallium nitride (GaN) layer on the barrier layer, an n-type interfacial layer on the p-type GaN layer, and a gate electrode on the n-type interfacial layer.
Information query
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