Invention Publication
- Patent Title: ETCHANT COMPOSITION FOR ETCHING SILICON AND SILICON GERMANIUM, AND PREPARATION METHOD OF PATTERN USING THE SAME
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Application No.: US18354055Application Date: 2023-07-18
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Publication No.: US20240263072A1Publication Date: 2024-08-08
- Inventor: Heesuk WOO , Kyusang AHN , Jung-Min OH , Jiwon KIM , Jinkyu ROH , Hyojoong YOON , Sang Won BAE , Kyungmo SUNG
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.,DONGWOO FINE-CHEM CO., LTD.
- Current Assignee: Samsung Electronics Co., Ltd.,DONGWOO FINE-CHEM CO., LTD.
- Current Assignee Address: KR Suwon-si; KR Iksan-si
- Priority: KR 20230013216 2023.01.31
- Main IPC: C09K13/08
- IPC: C09K13/08 ; H01L21/306
Abstract:
The present disclosure relates to an etchant composition for etching silicon and silicon germanium, and/or a preparation method of a pattern using the etchant composition. The etchant composition may include an oxidizing agent, a fluorine-based compound, a surfactant represented by Chemical Formula 1 or 2, and water. The etchant composition may include the surfactant in an amount of 5% to 40% by weight based on 100% by weight of the etchant composition.
Information query
