Invention Publication
- Patent Title: Data Transmission Circuit and Memory Device
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Application No.: US17796745Application Date: 2022-04-18
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Publication No.: US20240265952A1Publication Date: 2024-08-08
- Inventor: Xianjun Wu , Weibing Shang , Xiaoqing Shi
- Applicant: ChangXin Memory Technologies, Inc.
- Applicant Address: CN Hefei City
- Assignee: ChangXin Memory Technologies, Inc.
- Current Assignee: ChangXin Memory Technologies, Inc.
- Current Assignee Address: CN Hefei City
- Priority: CN 2110963315.6 2021.08.20
- International Application: PCT/CN2022/087372 2022.04.18
- Date entered country: 2022-08-01
- Main IPC: G11C7/08
- IPC: G11C7/08 ; G11C7/10

Abstract:
The disclosed data transmission circuit and a memory include a sense amplifier circuit, a first sub-discharge path, a second sub-discharge path, and a discharge adjustment unit. The sense amplifier circuit generate amplified signals based on two terminals. The first sub-discharge path, in the read state, discharges at the first terminal to the discharge terminal based on the first data line signal; the second sub-discharge path, in reading state, discharges at the second terminal to the discharge terminal based on the discharge adjustment signa. The discharge adjustment unit is electrically connected to the second sub-discharge path and the control signal, but is not connected to the first sub-discharge path, and is used for generating the discharge adjustment signal based on the control signal, to adjust the discharge capacity of the second sub-discharge path. The present disclosure improves the anti-interference ability and data transmission efficiency of the data transmission circuit.
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