- 专利标题： THROUGH SILICON VIAS AND METHODS OF FABRICATING THEREOF
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申请号： US18613592申请日： 2024-03-22
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公开(公告)号： US20240266219A1公开(公告)日： 2024-08-08
- 发明人: Min-Feng Kao , Dun-Nian Yaung , Hsing-Chih Lin , Jen-Cheng Liu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 分案原申请号： US17465232 2021.09.02
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/48
摘要：
Methods and devices of having an enclosure structure formed in a multi-layer interconnect and a through-silicon-via (TSV) extending through the enclosure structure. In some implementations, a protection layer is formed between the enclosure structure and the TSV.
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