An integrated circuit device includes a gate stack on a substrate, a spacer on first and second sidewalls of the gate stack, a source/drain area in an upper portion of the substrate on first and second sides of the gate stack, a cover semiconductor layer on the source/drain area, an interlayer insulating film on the cover semiconductor layer and surrounding sidewalls of the gate stack, and a contact in a contact hole that penetrates the interlayer insulating film and the cover semiconductor layer, the contact having a bottom portion contacting the cover semiconductor layer and the source/drain area.