- 专利标题: PASSIVATION SCHEME FOR PAD OPENINGS AND TRENCHES
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申请号: US18652868申请日: 2024-05-02
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公开(公告)号: US20240282728A1公开(公告)日: 2024-08-22
- 发明人: Ming-Hong Chang , Chun-Yi Yang , Kun-Ming Huang , Po-Tao Chu , Shen-Ping Wang , Chien-Li Kuo
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 分案原申请号: US15883797 2018.01.30
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L23/29 ; H01L23/31 ; H01L23/50 ; H01L23/522 ; H01L23/528
摘要:
An integrated circuit (IC) comprising an enhanced passivation scheme for pad openings and trenches is provided. In some embodiments, an interlayer dielectric (ILD) layer covers a substrate and at least partially defines a trench. The trench extends through the ILD layer from a top of the ILD layer to the substrate. A conductive pad overlies the ILD layer. A first passivation layer overlies the ILD layer and the conductive pad, and further defines a pad opening overlying the conductive pad. A second passivation layer overlies the ILD layer, the conductive pad, and the first passivation layer, and further lines sidewalls of the first passivation layer in the pad opening and sidewalls of the ILD layer in the trench. Further, the second passivation layer has a low permeability for moisture or vapor relative to the ILD layer.
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