Invention Publication
- Patent Title: Light-Emitting Device, Light-Emitting Apparatus, Electronic Device, and Lighting Device
-
Application No.: US18645743Application Date: 2024-04-25
-
Publication No.: US20240292648A1Publication Date: 2024-08-29
- Inventor: Satoshi SEO , Hiromi SEO , Kunihiko SUZUKI , Kanta ABE , Yuji IWAKI , Naoaki HASHIMOTO , Tsunenori SUZUKI
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Priority: JP 19110831 2019.06.14
- Main IPC: H10K50/16
- IPC: H10K50/16 ; H10K50/11 ; H10K50/15 ; H10K50/17 ; H10K50/81 ; H10K50/82 ; H10K59/00 ; H10K85/30 ; H10K101/40

Abstract:
A novel light-emitting device is provided. A light-emitting device with high emission efficiency is provided. A light-emitting device with a long lifetime is provided. A light-emitting device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer between the anode and the cathode. The EL layer includes a hole-injection layer, a light-emitting layer, and an electron-transport layer. The hole-injection layer is positioned between the anode and the light-emitting layer. The electron-transport layer is positioned between the light-emitting layer and the cathode. The hole-injection layer contains a first substance and a second substance. The first substance is an organic compound which has a hole-transport property and a HOMO level higher than or equal to −5.7 eV and lower than or equal to −5.4 eV. The second substance exhibits an electron-accepting property with respect to the first substance. The electron-transport layer contains a material whose resistance decreases with current flowing therethrough.
Information query