- 专利标题: H-BRIDGE CONTROL CIRCUIT FOR ELECTRO-STIMULATION THERAPEUTIC INSTRUMENT FOR NEUROMODULATION
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申请号: US18666745申请日: 2024-05-16
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公开(公告)号: US20240299734A1公开(公告)日: 2024-09-12
- 发明人: Wei Wang , Baitong Wang , Jules Anh Tuan Nguyen , Bing Ye
- 申请人: Fasikl Incorporated , Hangzhou Fasikl Technology Co.,Ltd
- 申请人地址: US TX DALLAS
- 专利权人: Fasikl Incorporated,Hangzhou Fasikl Technology Co.,Ltd
- 当前专利权人: Fasikl Incorporated,Hangzhou Fasikl Technology Co.,Ltd
- 当前专利权人地址: US TX DALLAS
- 主分类号: A61N1/02
- IPC分类号: A61N1/02 ; A61N1/36
摘要:
Disclosed is an H-bridge control circuit for an electro-stimulation therapeutic instrument for neuromodulation. The H-bridge control circuit includes an H-bridge circuit and a constant current source, where the H-bridge circuit includes a first positive channel metal oxide semiconductor (PMOS) transistor, a second PMOS transistor, a first negative channel metal oxide semiconductor (NMOS) transistor and a second NMOS transistor. Corresponding switching diodes are additionally arranged between the first PMOS transistor and a load and between the second PMOS transistor and the load to avoid an influence of safety of the therapeutic instrument by discharging charges during an interval of stimulation; and moreover, a resistance-capacitance (RC) circuit is additionally arranged between the first PMOS transistor, the second PMOS transistor and a control device such that connection and disconnection of the PMOS transistor can be controlled.
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