发明公开
- 专利标题: AVALANCHE PHOTODIODE PIXEL
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申请号: US18613987申请日: 2024-03-22
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公开(公告)号: US20240334087A1公开(公告)日: 2024-10-03
- 发明人: Raffaele BIANCHINI , Raul Andres BIANCHI , Mohammed AL-RAWHANI
- 申请人: STMicroelectronics International N.V.
- 申请人地址: CH Geneva
- 专利权人: STMicroelectronics International N.V.
- 当前专利权人: STMicroelectronics International N.V.
- 当前专利权人地址: CH Geneva
- 优先权: FR 03090 2023.03.30
- 主分类号: H04N25/773
- IPC分类号: H04N25/773 ; H01L27/146 ; H01L31/02 ; H01L31/107 ; H04N25/443 ; H04N25/709
摘要:
The present disclosure relates to an avalanche photodiode pixel including: a transistor adapted to be controlled by an enable signal having a first state for controlling the enabling of the pixel and a second state for controlling the disabling of the pixel, the transistor being configured to couple an avalanche photodiode of the pixel to a node of application of a substrate voltage when the enable signal is in the first state; and an output circuit adapted to be controlled by the enable signal and configured to provide a pixel output signal when the enable signal is in the first state and to block the pixel output signal when the enable signal is in the second state.
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