- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
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申请号: US18408215申请日: 2024-01-09
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公开(公告)号: US20240355757A1公开(公告)日: 2024-10-24
- 发明人: Jeonghyun Kim , Sangjin Kim , Jaesuk Park , Yigwon Kim , Changmin Park , Hyungju Ryu
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR 20230053597 2023.04.24
- 主分类号: H01L23/544
- IPC分类号: H01L23/544
摘要:
The present disclosure relates to semiconductor devices and their fabrication methods. An example semiconductor device comprises a substrate including a logic cell region and a key region, a dummy active pattern on the key region, and a key pattern in the dummy active pattern. The key pattern includes a key cell that is recessed at an upper portion of the substrate. The key cell includes a bottom surface lower than a top surface of the dummy active pattern, and a plurality of inner lateral surfaces that surround the bottom surface. The inner lateral surfaces include a first inner lateral surface and a second inner lateral surface opposite to the first inner lateral surface. A ratio of a silicon atom surface density of the second inner lateral surface to a silicon atom surface density of the first inner lateral surface is in a range of about 0.9 to about 1.1.
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