A three-dimensional (3D) integrated circuit (IC) is provided. In some embodiments, the 3D IC comprises a first IC die comprising a first substrate, a first interconnect structure disposed over the first substrate, and a first through substrate via (TSV) disposed through the first substrate. The 3D IC further comprises a second IC die comprising a second substrate, a second interconnect structure disposed over the second substrate, and a second TSV disposed through the second substrate. The 3D IC further comprises a bonding structure arranged between back sides of the first IC die and the second IC die opposite to corresponding interconnect structures and bonding the first IC die and the second IC die. The bonding structure comprises conductive features disposed between and electrically connecting the first TSV and the second TSV.