- 专利标题: TRIM WALL PROTECTION METHOD FOR MULTI-WAFER STACKING
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申请号: US18765696申请日: 2024-07-08
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公开(公告)号: US20240363469A1公开(公告)日: 2024-10-31
- 发明人: Sheng-Chan Li , Cheng-Hsien Chou , Sheng-Chau Chen , Cheng-Yuan Tsai , Kuo-Ming Wu
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H01L23/31
- IPC分类号: H01L23/31 ; H01L21/56 ; H01L21/768 ; H01L23/48 ; H01L23/528 ; H01L25/065
摘要:
The present disclosure, in some embodiments, relates to an integrated chip structure. The integrated chip structure includes a substrate and an interconnect structure on the substrate. The interconnect structure has a plurality of interconnects disposed within a dielectric structure. A dielectric material is along a sidewall of the interconnect structure. The dielectric material extends to within cracks in the sidewall of the dielectric structure.
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