A semiconductor structure may include an insulation layer surrounding side surfaces of vias, connection pads on the vias, respectively, a first insulation member on the insulation layer and including through openings in which the connection pads respectively are disposed, and a second insulation member on the insulation layer and surrounding the first insulation member. Each corresponding connection pad among the plurality of connection pads may be on a corresponding via among the plurality of vias and in a corresponding through opening among the plurality of through openings. A height of the second insulation member may be lower than the heights of the connection pads. Outermost through openings among the through openings may include a first inner side surface defined by a side surface of the first insulation member and a second inner side surface defined by a side surface of the second insulation member.