Invention Application
- Patent Title: READ DISTURB MANAGEMENT
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Application No.: US18787787Application Date: 2024-07-29
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Publication No.: US20240386972A1Publication Date: 2024-11-21
- Inventor: Zhenming Zhou , Murong Lang , Li-Te Chang
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C11/406

Abstract:
An example system can include a memory device and a processing device. The memory device can include a group of memory cells. The processing device can be coupled to the memory device. The processing device can be configured to determine a distance of a memory die from a center of a memory component. The processing device can be configured to perform a read disturb operation on the memory die based on the determined distance use a first voltage window for a set of memory cells of the group of memory cells during a first time period.
Information query